| Presentation | 2008-07-09 A Ta_2O_5 Solid-electrolyte Switch with Improved Reliability(Session3: Emerging Devices I) Naoki BANNO, Toshitsugu SAKAMOTO, Noriyuki IGUCHI, Shinji FUJIEDA, Kazuya TERABE, Tsuyoshi HASEGAWA, Masakazu AONO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replaced a previous solid electrolyte of Cu_2S with Ta_2O_5, which is compatible with a Si process. By using Ta_2O_5, we successfully controlled the turn-on voltage to adapt to CMOS operation. Furthermore, we examined the ON-state reliability of the Ta_2O_5-NanoBridge and found a trade-off between turn-off current and ON-state reliability, both of which depended on the ON conductance. By optimizing the ON conductance, NanoBridge using Ta_2O_5 achieved high durability against current (0.2mA, 105℃, 10 years) and fair turn-off current (5mA). NanoBridge can thus meet the requirements for FPGA applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Solid-electrolyte / Electrochemical reaction / Ion diffusion |
| Paper # | ED2008-52,SDM2008-71 |
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| Committee | SDM |
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| Conference Date | 2008/7/2(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Ta_2O_5 Solid-electrolyte Switch with Improved Reliability(Session3: Emerging Devices I) |
| Sub Title (in English) | |
| Keyword(1) | Solid-electrolyte |
| Keyword(2) | Electrochemical reaction |
| Keyword(3) | Ion diffusion |
| 1st Author's Name | Naoki BANNO |
| 1st Author's Affiliation | Device Platforms Research Laboratories, NEC Corporation:Japan Science and Technology Agency() |
| 2nd Author's Name | Toshitsugu SAKAMOTO |
| 2nd Author's Affiliation | Device Platforms Research Laboratories, NEC Corporation:Japan Science and Technology Agency |
| 3rd Author's Name | Noriyuki IGUCHI |
| 3rd Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation:Japan Science and Technology Agency |
| 4th Author's Name | Shinji FUJIEDA |
| 4th Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| 5th Author's Name | Kazuya TERABE |
| 5th Author's Affiliation | International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS):Japan Science and Technology Agency |
| 6th Author's Name | Tsuyoshi HASEGAWA |
| 6th Author's Affiliation | International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS):Japan Science and Technology Agency |
| 7th Author's Name | Masakazu AONO |
| 7th Author's Affiliation | International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS):Japan Science and Technology Agency |
| Date | 2008-07-09 |
| Paper # | ED2008-52,SDM2008-71 |
| Volume (vol) | vol.108 |
| Number (no) | 122 |
| Page | pp.pp.- |
| #Pages | 4 |
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