Presentation	2008-07-09 Precise Ion Implantation for Advanced MOS LSIs(Session2: Silicon Devices I) Toshiharu Suzuki,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted impurities will directly influence the device performance and yield. The importance of precise control of the incident angle of ion beam is discussed; the poor precision results in the deviation of V_	and I_ and asymmetry of them. Next, the effect of energy contamination caused by the deceleration of ions in front of a substrate (in order to obtain high beam current at low energy) on device characteristics is presented. Provisions in ion implanters for these issues are referred briefly. Defect generation during implantation and the impacts of the defects on the advanced device characteristics are also addressed. It is demonstrated that the amount of point defects is influenced by the implantation conditions and method, and the amount influences the redistribution of implanted impurities and activation during annealing.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)
Paper #	ED2008-44,SDM2008-63
Date of Issue

Conference Information
Committee	SDM
Conference Date	2008/7/2(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Precise Ion Implantation for Advanced MOS LSIs(Session2: Silicon Devices I)
Sub Title (in English)
Keyword(1)
1st Author's Name	Toshiharu Suzuki
1st Author's Affiliation	SEN Corporation, an SHI and Axcelis Company()
Date	2008-07-09
Paper #	ED2008-44,SDM2008-63
Volume (vol)	vol.108
Number (no)	122
Page	pp.pp.-
#Pages	6
Date of Issue