| Presentation | 2008-07-09 AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices) Tadayoshi Deguchi, Takashi Egawa, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heterostructure field-effect transistors (HFETs) and Schottky barrier diodes (SBDs). Novel HFETs with a LT-GaN cap layer have been proposed and fabricated, and we found that by using this LT-GaN cap layer as a gate insulator and providing surface passivation helps to significantly suppress current collapse and gate leakage in AlGaN/GaN HFETs. Furthermore, the combination of a LT-GaN cap layer and SiN film for the surface passivation led to both the suppression of current collapse and no significant degradation in the gate-drain breakdown voltage. We also investigated the correlation between the crystalline quality of LT-GaN cap layers and the current collapse in AlGaN/GaN HFETs, and found that a polycrystalline structure provides the most effective LT-GaN cap layer for suppressing current collapse. AlGaN/GaN SBDs using a LT-GaN cap layer to provide edge termination were also fabricated on Si substrates. The collapse-free AlGaN/GaN SBDs exhibited a high breakdown voltage of 1530V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / low-temperature GaN / SBD / HFET / contact resistance / current collapse / leakage current / breakdown voltage / enhancement-mode |
| Paper # | ED2008-41,SDM2008-60 |
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| Committee | SDM |
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| Conference Date | 2008/7/2(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices) |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | low-temperature GaN |
| Keyword(3) | SBD |
| Keyword(4) | HFET |
| Keyword(5) | contact resistance |
| Keyword(6) | current collapse |
| Keyword(7) | leakage current |
| Keyword(8) | breakdown voltage |
| Keyword(9) | enhancement-mode |
| 1st Author's Name | Tadayoshi Deguchi |
| 1st Author's Affiliation | Advanced Technology Center, Research Laboratory, New Japan Radio Co., Ltd.() |
| 2nd Author's Name | Takashi Egawa |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2008-07-09 |
| Paper # | ED2008-41,SDM2008-60 |
| Volume (vol) | vol.108 |
| Number (no) | 122 |
| Page | pp.pp.- |
| #Pages | 6 |
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