Presentation	2008-07-18 Impact of Tantalum Composition in TaC_x/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL M. Goto, K. Tatsumura, S. Kawanaka, K. Nakajima, R. Ichihara, Y. Yoshimizu, H. Onoda, K. Nagatomo, T. Sasaki, T. Fukushima, A. Nomachi, S. Inumiya, T. Aoyama, M. Koyama, Y. Toyoshima,
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Abstract(in English)	We report TaC_x/HfSiON gate stack CMOS device with simplified gate 1^ process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate/High-k dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaC_x composition, fixed charge free TaC_x/HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and Stress Liner (SL), L_g=35nm high performance TaC_x/HfSiON devices is achieved.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Metal Gate / High-k / TaC / HfSiON / MOSFET / SMT / Stress Liner
Paper #	SDM2008-147,ICD2008-57
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Conference Information
Committee	ICD
Conference Date	2008/7/10(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Impact of Tantalum Composition in TaC_x/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Sub Title (in English)
Keyword(1)	Metal Gate
Keyword(2)	High-k
Keyword(3)	TaC
Keyword(4)	HfSiON
Keyword(5)	MOSFET
Keyword(6)	SMT
Keyword(7)	Stress Liner
1st Author's Name	M. Goto
1st Author's Affiliation	Semiconductor Company, Toshiba Corporation()
2nd Author's Name	K. Tatsumura
2nd Author's Affiliation	Corporate R & D Center, Toshiba Corporation
3rd Author's Name	S. Kawanaka
3rd Author's Affiliation	Semiconductor Company, Toshiba Corporation
4th Author's Name	K. Nakajima
4th Author's Affiliation	Semiconductor Company, Toshiba Corporation
5th Author's Name	R. Ichihara
5th Author's Affiliation	Corporate R & D Center, Toshiba Corporation
6th Author's Name	Y. Yoshimizu
6th Author's Affiliation	Semiconductor Company, Toshiba Corporation
7th Author's Name	H. Onoda
7th Author's Affiliation	Semiconductor Company, Toshiba Corporation
8th Author's Name	K. Nagatomo
8th Author's Affiliation	Semiconductor Company, Toshiba Corporation
9th Author's Name	T. Sasaki
9th Author's Affiliation	Semiconductor Company, Toshiba Corporation
10th Author's Name	T. Fukushima
10th Author's Affiliation	Semiconductor Company, Toshiba Corporation
11th Author's Name	A. Nomachi
11th Author's Affiliation	Semiconductor Company, Toshiba Corporation
12th Author's Name	S. Inumiya
12th Author's Affiliation	Semiconductor Company, Toshiba Corporation
13th Author's Name	T. Aoyama
13th Author's Affiliation	Semiconductor Company, Toshiba Corporation
14th Author's Name	M. Koyama
14th Author's Affiliation	Corporate R & D Center, Toshiba Corporation
15th Author's Name	Y. Toyoshima
15th Author's Affiliation	Semiconductor Company, Toshiba Corporation
Date	2008-07-18
Paper #	SDM2008-147,ICD2008-57
Volume (vol)	vol.108
Number (no)	140
Page	pp.pp.-
#Pages	6
Date of Issue