| Presentation | 2008-07-17 Co-design of CNT based devices and circuitry : How can CNT-based circuit overcome Si-CMOS? Shinobu FUJITA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Emerging devices using new materials (post-Si) are expected to replace Si-based MOSFET in future. This paper firstly clarifies carbon-nanotube (CNT) is the most promising candidate for it by analyzing based on "co-design" of future CMOS. Also, this paper assesses requirement for two kinds of CNT-based devices, FETs (CNFET) and nano-electromechanical-switches (NEMS), to be beyond Si based CMOS performance of some circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Carbon nanotube / CNT / CNFET / NEMS / post-Si |
| Paper # | SDM2008-138,ICD2008-48 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2008/7/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Co-design of CNT based devices and circuitry : How can CNT-based circuit overcome Si-CMOS? |
| Sub Title (in English) | |
| Keyword(1) | Carbon nanotube |
| Keyword(2) | CNT |
| Keyword(3) | CNFET |
| Keyword(4) | NEMS |
| Keyword(5) | post-Si |
| 1st Author's Name | Shinobu FUJITA |
| 1st Author's Affiliation | Toshiba Corporation, R&D Center() |
| Date | 2008-07-17 |
| Paper # | SDM2008-138,ICD2008-48 |
| Volume (vol) | vol.108 |
| Number (no) | 140 |
| Page | pp.pp.- |
| #Pages | 6 |
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