Presentation 2008-07-17
Present Status and Future Trend of Characteristic Variations in Scaled CMOS
T. HIRAMOTO, K. Takeuchi, T. Tsunomura, Arifin T. Putra, A. Nishida, S. Kamohara,
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Abstract(in English) The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variability may place the limit of MOS transistor scaling, the origins of characteristics variation of MOS transistors have not been fully understood. Intensive and extensive investigations have been performed in order to elucidate the origins of random variation in scaled MOSFETs in framework of the MIRAI Project. The main achievements are: (1) Designed 1M device-matrix-array TEG and found that V_ distributions of both nFETs and pFETs show high normality in the range of ±5σ, (2) Developed a new normalization method of Vth fluctuations in terms not only of device size but also of V_ and T_ (Takeuchi Plot), and (3) Compared the Vth fluctuation data in different technologies and fabs using Takeuchi Plot and found that pFET fluctuations can be almost fully explained by discrete dopant fluctuations while nFET has some fluctuation mechanisms other than dopant fluctuations.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOSFET / Variability / Threshold voltage / Random dopant fluctuation / Pelgrom plot / Takeuchi plot
Paper # SDM2008-135,ICD2008-45
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Conference Date 2008/7/10(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) Variability
Keyword(3) Threshold voltage
Keyword(4) Random dopant fluctuation
Keyword(5) Pelgrom plot
Keyword(6) Takeuchi plot
1st Author's Name T. HIRAMOTO
1st Author's Affiliation Institute of Industrial Science, University of Tokyo:MIRAI-Selete()
2nd Author's Name K. Takeuchi
2nd Author's Affiliation MIRAI-Selete
3rd Author's Name T. Tsunomura
3rd Author's Affiliation MIRAI-Selete
4th Author's Name Arifin T. Putra
4th Author's Affiliation Institute of Industrial Science, University of Tokyo
5th Author's Name A. Nishida
5th Author's Affiliation MIRAI-Selete
6th Author's Name S. Kamohara
6th Author's Affiliation MIRAI-Selete
Date 2008-07-17
Paper # SDM2008-135,ICD2008-45
Volume (vol) vol.108
Number (no) 140
Page pp.pp.-
#Pages 5
Date of Issue