| Presentation | 2008-07-17 A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations Makoto YABUUCHI, Koji NII, Yasumasa TSUKAMOTO, Shigeki OHBAYASHI, Susumu IMAOKA, Yoshinobu YAMAGAMI, Satoshi ISHIKURA, Toshio TERANO, Katsuji SATOMI, Hironori AKAMATSU, Hirofumi SHINOHARA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We develop 512Kb SRAM module in 45nm LSTP CMOS technology with the variation tolerant assist circuits against process and temperature. We introduce a passive resistance to the read assist circuit, and adopt the divided VDD line in the memory cell array to the write assist circuit. The SRAM cell areas with 0.245μm2 and 0.327μm2 are fabricated. From the measurements, we show that, by using our circuitry, the SNM exceeds 120mV and the write margin is improved by 15% in the worst PVT condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SRAM / Assist circuit / 45nm CMOS / Variability |
| Paper # | SDM2008-131,ICD2008-41 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 2008/7/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | Assist circuit |
| Keyword(3) | 45nm CMOS |
| Keyword(4) | Variability |
| 1st Author's Name | Makoto YABUUCHI |
| 1st Author's Affiliation | Renesas Technology Corporation() |
| 2nd Author's Name | Koji NII |
| 2nd Author's Affiliation | Renesas Technology Corporation |
| 3rd Author's Name | Yasumasa TSUKAMOTO |
| 3rd Author's Affiliation | Renesas Technology Corporation |
| 4th Author's Name | Shigeki OHBAYASHI |
| 4th Author's Affiliation | Renesas Technology Corporation |
| 5th Author's Name | Susumu IMAOKA |
| 5th Author's Affiliation | Renesas Design Corporation |
| 6th Author's Name | Yoshinobu YAMAGAMI |
| 6th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Satoshi ISHIKURA |
| 7th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Toshio TERANO |
| 8th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Katsuji SATOMI |
| 9th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. |
| 10th Author's Name | Hironori AKAMATSU |
| 10th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. |
| 11th Author's Name | Hirofumi SHINOHARA |
| 11th Author's Affiliation | Renesas Technology Corporation |
| Date | 2008-07-17 |
| Paper # | SDM2008-131,ICD2008-41 |
| Volume (vol) | vol.108 |
| Number (no) | 140 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |