| Presentation | 2008-07-17 Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM Gen TSUTSUI, Kazuaki TSUNODA, Nayuta KARIYA, Yutaka AKIYAMA, Tomohisa ABE, Shinya MARUYAMA, Tadashi FUKASE, Mieko SUZUKI, Yasushi YAMAGATA, Kiyotaka IMAI, |
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| PDF Download Page |  PDF download Page Link |
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| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | Work function (WF) control is a key technology for the reduction of channel impurity concentration, which results in the decrease in intrinsic random dopant variation (IRDV). It is demonstrated that saturation V_ | is affected not only by IRDV but also by S factor variation owing to fluctuation of DIBL. While channel impurity reduction by WF control decreases IRDV, DIBL is degraded in turn, and this enhances S factor variation. The optimal ΔV_| is realized compared to conventional CMOS.
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| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | Hafnium / Random dopant fluctuation / Threshold voltage variation / Work function control / S factor variation / SRAM | ||
| Paper # | SDM2008-130,ICD2008-40 | ||
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2008/7/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM |
| Sub Title (in English) | |
| Keyword(1) | Hafnium |
| Keyword(2) | Random dopant fluctuation |
| Keyword(3) | Threshold voltage variation |
| Keyword(4) | Work function control |
| Keyword(5) | S factor variation |
| Keyword(6) | SRAM |
| 1st Author's Name | Gen TSUTSUI |
| 1st Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation() |
| 2nd Author's Name | Kazuaki TSUNODA |
| 2nd Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 3rd Author's Name | Nayuta KARIYA |
| 3rd Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 4th Author's Name | Yutaka AKIYAMA |
| 4th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 5th Author's Name | Tomohisa ABE |
| 5th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 6th Author's Name | Shinya MARUYAMA |
| 6th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 7th Author's Name | Tadashi FUKASE |
| 7th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 8th Author's Name | Mieko SUZUKI |
| 8th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 9th Author's Name | Yasushi YAMAGATA |
| 9th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| 10th Author's Name | Kiyotaka IMAI |
| 10th Author's Affiliation | Advanced Device Development Division, NEC Electronics Corporation |
| Date | 2008-07-17 |
| Paper # | SDM2008-130,ICD2008-40 |
| Volume (vol) | vol.108 |
| Number (no) | 140 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |