| Presentation | 2008-07-17 Drain Current Fluctuation in High-κ Dielectric p-MOSFETs : Effects of Single-Hole Capture/Emission by the Traps in High-κ Dielectric Shigeki KOBAYASHI, Masumi SAITOH, Ken UCHIDA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, RTN in High-κ gate dielectric MOSFET have not been fully studied yet. In this paper, we have studied RTN in High-κ MOSFETs in comparison with that in SiO_2 p-MOSFETs. It is found for the first time that the reduction of RTN amplitude (ΔI_d/I_d) by the surface holes is smaller in High-κ p-MOSFETs, comparing to the SiO_2 p-MOSFETs. It is also found that slower traps in the High-κ gate dielectric more severely degrade I_d. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the High-κ gate dielectric. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / RTN / High-κ |
| Paper # | SDM2008-129,ICD2008-39 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2008/7/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Drain Current Fluctuation in High-κ Dielectric p-MOSFETs : Effects of Single-Hole Capture/Emission by the Traps in High-κ Dielectric |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | RTN |
| Keyword(3) | High-κ |
| 1st Author's Name | Shigeki KOBAYASHI |
| 1st Author's Affiliation | Corporate Research & Development Center, Toshiba Corporation() |
| 2nd Author's Name | Masumi SAITOH |
| 2nd Author's Affiliation | Corporate Research & Development Center, Toshiba Corporation |
| 3rd Author's Name | Ken UCHIDA |
| 3rd Author's Affiliation | Corporate Research & Development Center, Toshiba Corporation |
| Date | 2008-07-17 |
| Paper # | SDM2008-129,ICD2008-39 |
| Volume (vol) | vol.108 |
| Number (no) | 140 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |