Presentation 2008-07-24
Fabrication of Bi_2Sr_2CaCu_2O_x SQUID by acid treatment process
T. Kato, T. Yoshida, A. Miwa, H. Shimakage, A. Kawai, H. Suematsu, T. Ishiguro, K. Hamasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have previously reported on an acid-treatment process for the fabrication of Bi_2Sr_2CaCu_2O_x (Bi-2212) stacks. In this process, we found interesting phenomena that Bi-2212 single crystal dipped into acid solution of pH>1.4 was varied to transparent material. In this study, we tried to fabricate dc-SQUID with an in-plane loop having two stacks of IJJs by this acid-treatment process. The SQUID showed large hysteretic current-voltage characteristics at liquid N_2 temperature. The SQUIDs showed periodic modulation of the critical current I_c (B) as a function of magnetic field, but had poor batch-to-batch reproducibility. Although there are many problems to be solved, the proposed acid treatment process may be useful for dc-SQUID based on Bi-2212 IJJs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Intrinsic Josephson junction / Acid treatment process / dc-SQUID
Paper # SCE2008-16
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Conference Information
Committee SCE
Conference Date 2008/7/17(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Bi_2Sr_2CaCu_2O_x SQUID by acid treatment process
Sub Title (in English)
Keyword(1) Intrinsic Josephson junction
Keyword(2) Acid treatment process
Keyword(3) dc-SQUID
1st Author's Name T. Kato
1st Author's Affiliation Nagaoka University of Technology()
2nd Author's Name T. Yoshida
2nd Author's Affiliation Nagaoka University of Technology
3rd Author's Name A. Miwa
3rd Author's Affiliation Nagaoka University of Technology
4th Author's Name H. Shimakage
4th Author's Affiliation KARC, National Institute of Information and Communications Technology
5th Author's Name A. Kawai
5th Author's Affiliation Nagaoka University of Technology
6th Author's Name H. Suematsu
6th Author's Affiliation Nagaoka University of Technology
7th Author's Name T. Ishiguro
7th Author's Affiliation Tokyo University of Science
8th Author's Name K. Hamasaki
8th Author's Affiliation Nagaoka University of Technology
Date 2008-07-24
Paper # SCE2008-16
Volume (vol) vol.108
Number (no) 152
Page pp.pp.-
#Pages 5
Date of Issue