| Presentation | 2008-06-27 Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding Tadashi OKUMURA, Takeo MARUYAMA, Hidenori YONEZAWA, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With aiming at realization of single wavelength lasers required for optical wiring in next generation LSIs, we investigated GaInAsP/InP DFB lasers prepared on an SOI substrate A continuous-wave operation up to 85℃ under optical pumping was demonstrated with GaInAsP/InP membrane DFB lasers prepared on an SOI substrate. Additionally, injection type DFB lasers directly bonded on an SOI substrate were successfully realized for the first time by reducing the series resistance. A threshold current as low as 104mA was obtained under a room-temperature pulsed condition for the stripe width of 25μm and the cavity length of 1mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon on Insulator / Distributed Feedback laser / Wafer bonding / Membrane laser |
| Paper # | OPE2008-28,LQE2008-29 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding |
| Sub Title (in English) | |
| Keyword(1) | Silicon on Insulator |
| Keyword(2) | Distributed Feedback laser |
| Keyword(3) | Wafer bonding |
| Keyword(4) | Membrane laser |
| 1st Author's Name | Tadashi OKUMURA |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Department of Electrical and Electronic Engineering Tokyo Institute of Technology() |
| 2nd Author's Name | Takeo MARUYAMA |
| 2nd Author's Affiliation | Quantum Nanoelectronics Research Center Tokyo Institute of Technology:Japan Science and Technology Agency:Graduate School of Natural Science & Technology,Kanazawa University |
| 3rd Author's Name | Hidenori YONEZAWA |
| 3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Department of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 4th Author's Name | Nobuhiko NISHIYAMA |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering Tokyo Institute of Technology |
| 5th Author's Name | Shigehisa ARAI |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center Tokyo Institute of Technology:Japan Science and Technology Agency |
| Date | 2008-06-27 |
| Paper # | OPE2008-28,LQE2008-29 |
| Volume (vol) | vol.108 |
| Number (no) | 114 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |