| Presentation | 2008-06-27 Heterojunction Phototransistor with High Responsivity at 2.3μm wavelength Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Phototransistor / high responsivity / multi-quantum-well / InAs/InGaAs |
| Paper # | OPE2008-22,LQE2008-23 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2008/6/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heterojunction Phototransistor with High Responsivity at 2.3μm wavelength |
| Sub Title (in English) | |
| Keyword(1) | Phototransistor |
| Keyword(2) | high responsivity |
| Keyword(3) | multi-quantum-well |
| Keyword(4) | InAs/InGaAs |
| 1st Author's Name | Hideki Fukano |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Tomonari Sato |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Manabu Mitsuhara |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 4th Author's Name | Yasuhiro Kondo |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2008-06-27 |
| Paper # | OPE2008-22,LQE2008-23 |
| Volume (vol) | vol.108 |
| Number (no) | 114 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |