Presentation 2008-07-18
Experimental Study on Radiated Electromagnetic Field Strength due to Micro Gap Discharge Below 1kV
Ken KAWAMATA, Shigeki MINEGISHI, Akira HAGA, Osamu Fujiwara,
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Abstract(in English) Relationship between breakdown field strength and radiated electromagnetic field strength was examined in experimental study. In the first, transition duration of voltage and current rise time due to small gap discharge as the low voltage ESD investigated in time domain. The measurement system used the 12GHz experimental system. And so, the sensing system was used an E-field sensor and a H-field sensor. As a consequence of the experiment using the system, voltage and current rise time of transition duration were shown 32ps or less. Besides, breakdown field was examined to corroborate the very fast transition durations of about 32ps. The breakdown field was very high of about 8x10^7V/m in low voltage discharging of below 330V. Also we confirmed that the radiated electromagnetic field strength value in low voltage discharge of about 400V was higher than high voltage discharge of about 900V.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Breakdown field / Radiated electromagnetic field / ESD / Micro gap discharge
Paper # EMCJ2008-45,EMD2008-27
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Committee EMD
Conference Date 2008/7/11(1days)
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Registration To Electromechanical Devices (EMD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Experimental Study on Radiated Electromagnetic Field Strength due to Micro Gap Discharge Below 1kV
Sub Title (in English)
Keyword(1) Breakdown field
Keyword(2) Radiated electromagnetic field
Keyword(3) ESD
Keyword(4) Micro gap discharge
1st Author's Name Ken KAWAMATA
1st Author's Affiliation Graduate school of Engineering, Hachinohe Inst. of Tech.()
2nd Author's Name Shigeki MINEGISHI
2nd Author's Affiliation Graduate school of Engineering, Tohoku Gakuin University
3rd Author's Name Akira HAGA
3rd Author's Affiliation Graduate school of Engineering, Tohoku Gakuin University
4th Author's Name Osamu Fujiwara
4th Author's Affiliation Graduate school of Engineering, Nagoya Inst. of Tech.
Date 2008-07-18
Paper # EMCJ2008-45,EMD2008-27
Volume (vol) vol.108
Number (no) 145
Page pp.pp.-
#Pages 4
Date of Issue