Presentation 2008-06-27
Electrode metal dependence of carrier behavior in organic FET : direct observation of carrier using TRM-SHG
Takaaki Manaka, Motonaru Nakao, Martin Weis, Fei Liu, Eunju Lim, Mitsumasa Iwamoto,
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Abstract(in English) The carrier behavior in pentacene field effect transistor (FET) was evaluated by the time-resolved microscopic second harmonic generation (TRM-SHG) measurement. Under the pulse operation of organic FET (OFET), time-evolution of the electric field distribution along the channel is observed by changing the delay time between laser pulses and voltage pulses that drive OFET. Monitoring the SH intensity at electrode edge enables us to observe practically the injection property. SH intensity at Au electrode edge immediately disappear (actually less than 100ns) after the voltage application also indicates the low barrier height for hole injection. By contrast, for devices with Ag electrodes, SH intensity at electrode edge gradually decreases, but the SH signal at electrode edge remains after reaching to a steady state. This implies that accumulation of injected charges is not complete, and relaxation of electric field at the edge of electrode is not sufficient.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Optical second harmonic generation / Time-resolved spectroscopy / Imaging / Organic FET / Pentacene
Paper # EMD2008-21,CPM2008-40,OME2008-42
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Committee OME
Conference Date 2008/6/20(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrode metal dependence of carrier behavior in organic FET : direct observation of carrier using TRM-SHG
Sub Title (in English)
Keyword(1) Optical second harmonic generation
Keyword(2) Time-resolved spectroscopy
Keyword(3) Imaging
Keyword(4) Organic FET
Keyword(5) Pentacene
1st Author's Name Takaaki Manaka
1st Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology()
2nd Author's Name Motonaru Nakao
2nd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
3rd Author's Name Martin Weis
3rd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
4th Author's Name Fei Liu
4th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
5th Author's Name Eunju Lim
5th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
6th Author's Name Mitsumasa Iwamoto
6th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
Date 2008-06-27
Paper # EMD2008-21,CPM2008-40,OME2008-42
Volume (vol) vol.108
Number (no) 112
Page pp.pp.-
#Pages 6
Date of Issue