Presentation 2008-06-27
Analysis of pentacene FET with ferroelectric gate insulator: effect of Source and Drain electrodes
Shuhei YOSHITA, Ryosuke TAMURA, Eunju LIM, Takaaki MANAKA, Mitsumasa IWAMOTO,
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Abstract(in English) Using pentacene field effect transistors with ferroelectric gate insulator, we studied the charge accumulation at the FET channel in terms of carrier injection and turn over of spontaneous polarization of the gate insulator. The difference of work-function of metal electrodes (Au,Al) leads to the difference in a voltage that generates the turn over of the spontaneous polarization. In the case of Al electrodes, the voltage of the turn over depends on the sweep speed of the gate voltage. This result suggests that the accumulation of holes from Al electrodes is restricted owing to the injection barrier height.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) organic field effect transistor / OFET / pentacene / injection barrier / turning over of spontaneous polarization / P(VDF-TeFE)
Paper # EMD2008-20,CPM2008-39,OME2008-41
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Committee OME
Conference Date 2008/6/20(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of pentacene FET with ferroelectric gate insulator: effect of Source and Drain electrodes
Sub Title (in English)
Keyword(1) organic field effect transistor
Keyword(2) OFET
Keyword(3) pentacene
Keyword(4) injection barrier
Keyword(5) turning over of spontaneous polarization
Keyword(6) P(VDF-TeFE)
1st Author's Name Shuhei YOSHITA
1st Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology()
2nd Author's Name Ryosuke TAMURA
2nd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
3rd Author's Name Eunju LIM
3rd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
4th Author's Name Takaaki MANAKA
4th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
5th Author's Name Mitsumasa IWAMOTO
5th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
Date 2008-06-27
Paper # EMD2008-20,CPM2008-39,OME2008-41
Volume (vol) vol.108
Number (no) 112
Page pp.pp.-
#Pages 5
Date of Issue