| Presentation | 2008-06-09 Mobility Enhancement in Ultra Thin Body MOSFETs by Quantum Effects Toshiro HIRAMOTO, Ken SHIMIZU, Gen TSUTSUI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Transport in ultra-thin-body (UTB) SOI MOSFETs is extensively studied by experiments and calculations. When SOI thickness is too thin, the transport properties in UTB devices are strongly affected by the quantum confinement effects. Mobility enhancement in hole is experimentally demonstrated in (110) UTB SOI PFET with SOI thickness of around 4nm due to the suppression of phonon scattering. Mobility enhancement in electron is also experimentally demonstrated in (110) UTB SOI NFET with double-gate operation due to suppression of surface roughness scattering caused by volume inversion effect. It is also found that mobility is enhanced by applying uniaxial tensile stress to (110) UTB MOSFETs. It is essential to understand and positively utilize the new physical phenomena in nanoscale structures in designing nanoscale MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / SOI / Mobility / Quantum Effect / Quantum Confinement / Phonon Scattering / Double-Gate / Strain |
| Paper # | SDM2008-47 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/6/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mobility Enhancement in Ultra Thin Body MOSFETs by Quantum Effects |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | SOI |
| Keyword(3) | Mobility |
| Keyword(4) | Quantum Effect |
| Keyword(5) | Quantum Confinement |
| Keyword(6) | Phonon Scattering |
| Keyword(7) | Double-Gate |
| Keyword(8) | Strain |
| 1st Author's Name | Toshiro HIRAMOTO |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Ken SHIMIZU |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Gen TSUTSUI |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2008-06-09 |
| Paper # | SDM2008-47 |
| Volume (vol) | vol.108 |
| Number (no) | 80 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |