| Presentation | 2008-06-13 Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki TANAKA, Yasunobu SUMIDA, Hiroji KAWAI, Toshi-kazu SUZUKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of AlGaN/GaN heterojunction field-effect transistors on sapphire substrates. Although the AlN passivation suppresses the drain current decrease at high drain voltage due to self-heating reduction, a deterioration of the off-state and the subthreshold characteristics is observed. On the other hand, the SiN passivation is less effective for the self-heating reduction, but does not deteriorate the off-state and the subthreshold characteristics. The SiN/AlN bilayer passivation does not deteriorate the off-state and the subthreshold characteristics, and is slightly effective for the self-heating reduction. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN heterojunction field-effect transistor / surface passivation / SiN/AlN bilayer structure |
| Paper # | ED2008-22 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterojunction field-effect transistor |
| Keyword(2) | surface passivation |
| Keyword(3) | SiN/AlN bilayer structure |
| 1st Author's Name | Nariaki TANAKA |
| 1st Author's Affiliation | Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology() |
| 2nd Author's Name | Yasunobu SUMIDA |
| 2nd Author's Affiliation | POWDEC K.K. |
| 3rd Author's Name | Hiroji KAWAI |
| 3rd Author's Affiliation | POWDEC K.K. |
| 4th Author's Name | Toshi-kazu SUZUKI |
| 4th Author's Affiliation | Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology |
| Date | 2008-06-13 |
| Paper # | ED2008-22 |
| Volume (vol) | vol.108 |
| Number (no) | 87 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |