Presentation 2008/2/1
Pore-Connectivity Dependence of Moisture Absorption into Porous Low-k Films by Positron-Annihilation Lifetime Spectroscopy
Fuminori ITO, Tsuneo TAKEUCHI, Hironori YAMAMOTO, Toshiyuki OHDAIRA, Ryoichi SUZUKI, Yoshihiro HAYASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The moisture absorption into porous low-k materials with various pore properties such as pore-size and pore-connectivity was investigated, using positron annihilation lifetime spectroscopy (PALS). By decreasing the pore-connectivity as well as the pore-size itself, the porous low-k films showed the strong resistance to moisture absorption, even after severe humid condition such as pressure-cooker-test (PCT). The reduction of pore-connectivity toward the closed-pore is quite effective to control the highly reliable porous films toward 45-nm-node and beyond.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cu interconnect / Low-k film / Porous film / Pore / Moisture absorption / Positron annihilation
Paper # SDM2007-268
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Conference Information
Committee SDM
Conference Date 2008/2/1(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Pore-Connectivity Dependence of Moisture Absorption into Porous Low-k Films by Positron-Annihilation Lifetime Spectroscopy
Sub Title (in English)
Keyword(1) Cu interconnect
Keyword(2) Low-k film
Keyword(3) Porous film
Keyword(4) Pore
Keyword(5) Moisture absorption
Keyword(6) Positron annihilation
1st Author's Name Fuminori ITO
1st Author's Affiliation Device Platforms Research Labs., NEC Corporation()
2nd Author's Name Tsuneo TAKEUCHI
2nd Author's Affiliation Device Platforms Research Labs., NEC Corporation
3rd Author's Name Hironori YAMAMOTO
3rd Author's Affiliation Device Platforms Research Labs., NEC Corporation
4th Author's Name Toshiyuki OHDAIRA
4th Author's Affiliation Advanced Industrial Science and Technology (AIST)
5th Author's Name Ryoichi SUZUKI
5th Author's Affiliation Advanced Industrial Science and Technology (AIST)
6th Author's Name Yoshihiro HAYASHI
6th Author's Affiliation Device Platforms Research Labs., NEC Corporation
Date 2008/2/1
Paper # SDM2007-268
Volume (vol) vol.107
Number (no) 481
Page pp.pp.-
#Pages 4
Date of Issue