Presentation 2008/2/1
32nm node Ultralow-k(k=2.1)/Cu Damascene Multilevel Interconnect using High-Porosity (50%) High-Modulus (9GPa) Self-Assembled Porous Silica
S. Chikaki, K. Kinoshita, T. Nakayama, K. Kohmura, H. Tanaka, M. Hirakawa, E. Soda, Y. Seino, N. Hata, T. Kikkawa, S. Saito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Self-assembled / Low-k / Interconnect / Porous silica
Paper # SDM2007-267
Date of Issue

Conference Information
Committee SDM
Conference Date 2008/2/1(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 32nm node Ultralow-k(k=2.1)/Cu Damascene Multilevel Interconnect using High-Porosity (50%) High-Modulus (9GPa) Self-Assembled Porous Silica
Sub Title (in English)
Keyword(1) Self-assembled
Keyword(2) Low-k
Keyword(3) Interconnect
Keyword(4) Porous silica
1st Author's Name S. Chikaki
1st Author's Affiliation Semiconductor Leading Edge Technologies, Inc. (Selete)()
2nd Author's Name K. Kinoshita
2nd Author's Affiliation Semiconductor Leading Edge Technologies, Inc. (Selete)
3rd Author's Name T. Nakayama
3rd Author's Affiliation ULVAC, Inc.
4th Author's Name K. Kohmura
4th Author's Affiliation Mitsui Chemicals, Inc.
5th Author's Name H. Tanaka
5th Author's Affiliation Mitsui Chemicals, Inc.
6th Author's Name M. Hirakawa
6th Author's Affiliation ULVAC, Inc.
7th Author's Name E. Soda
7th Author's Affiliation Semiconductor Leading Edge Technologies, Inc. (Selete)
8th Author's Name Y. Seino
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name N. Hata
9th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
10th Author's Name T. Kikkawa
10th Author's Affiliation Hiroshima Univ.:National Institute of Advanced Industrial Science and Technology (AIST)
11th Author's Name S. Saito
11th Author's Affiliation Semiconductor Leading Edge Technologies, Inc. (Selete)
Date 2008/2/1
Paper # SDM2007-267
Volume (vol) vol.107
Number (no) 481
Page pp.pp.-
#Pages 4
Date of Issue