Presentation | 2008-06-26 A study for performance modeling of circuits using MTCMOS power gating Yusuke HIKOSAKA, Yuichiro TACHIKAWA, Junki MIYAJIMA, Masahiro FUKUI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In the processes before the 90nm generation, most of the power is consumed by the dynamic power which is consumed by the charge and discharge of the load capacitance. Accompanying with the progress of process technologies, the static power which is consumed by the leak current of transistors tends to increase. Specifically, it is expected that the leak current reaches from 50% to 70% when the process technology is smaller than 65nm. Therefore, the MTCMOS is one of important techniques to reduce the leak current. We propose a performance modeling of MTCMOS in this paper. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MTCMOS / leak model / rush current / wake up time |
Paper # | CAS2008-13,VLD2008-26,SIP2008-47 |
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Conference Information | |
Committee | CAS |
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Conference Date | 2008/6/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Circuits and Systems (CAS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A study for performance modeling of circuits using MTCMOS power gating |
Sub Title (in English) | |
Keyword(1) | MTCMOS |
Keyword(2) | leak model |
Keyword(3) | rush current |
Keyword(4) | wake up time |
1st Author's Name | Yusuke HIKOSAKA |
1st Author's Affiliation | Graduate School Science and Engineering, Ritsumeikan University() |
2nd Author's Name | Yuichiro TACHIKAWA |
2nd Author's Affiliation | Graduate School Science and Engineering, Ritsumeikan University |
3rd Author's Name | Junki MIYAJIMA |
3rd Author's Affiliation | Dept. of VLSI system design, Ritsumeikan University |
4th Author's Name | Masahiro FUKUI |
4th Author's Affiliation | Dept. of VLSI system design, Ritsumeikan University |
Date | 2008-06-26 |
Paper # | CAS2008-13,VLD2008-26,SIP2008-47 |
Volume (vol) | vol.108 |
Number (no) | 104 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |