Presentation 2008-04-18
Analysis of Wear-Out Degradation of a Ru-doped SIBH InGaAsP DFB laser Using an Optical-Beam-Induced Current Monitor
Tatsuya TAKESHITA, Ryuzo IGA, Mitsuru SUGO, Yasuhiro Kondo,
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Abstract(in English) We investigated the degradation behavior of InGaAsP distributed feedback lasers (DFBs) at high temperature by employing the optical-beam-induced current (OBIC) measurement technique. The DFB lasers with Ru-doped semi-insulating buried heterostructure operated very stably at an ambient temperature of 85℃. It is found that there is more degradation in the SCH layer than in the active layer. We presume that the degradation mechanism is governed by diffused defects with a vertical direction in the crystal plane.
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Keyword(in English) semiconductor lasers / quantum well lasers / failure analysis / reliability / aging
Paper # R2008-3,CPM2008-3,OPE2008-3
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Committee CPM
Conference Date 2008/4/11(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Wear-Out Degradation of a Ru-doped SIBH InGaAsP DFB laser Using an Optical-Beam-Induced Current Monitor
Sub Title (in English)
Keyword(1) semiconductor lasers
Keyword(2) quantum well lasers
Keyword(3) failure analysis
Keyword(4) reliability
Keyword(5) aging
1st Author's Name Tatsuya TAKESHITA
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Ryuzo IGA
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Mitsuru SUGO
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
4th Author's Name Yasuhiro Kondo
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2008-04-18
Paper # R2008-3,CPM2008-3,OPE2008-3
Volume (vol) vol.108
Number (no) 8
Page pp.pp.-
#Pages 6
Date of Issue