Presentation 2008-05-16
Dislocation in AlGaN grown on grooved AlN
Toshiaki MORI, Toshiaki ASAI, Kentaro NAGAMATSU, Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI,
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Abstract(in English) To realize high efficiency UV LED and LD with emission wavelength shorter than 360nm, low dislocation density AlGaN underlying layer is essential. In this study, compositional dependence of the crystalline quality of AlGaN on AlN template with or without groove structure was investigated using transmission electron micrography.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN / AlN / Sapphire / TEM / Dislocation / MOVPE
Paper # ED2008-12,CPM2008-20,SDM2008-32
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Committee SDM
Conference Date 2008/5/8(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dislocation in AlGaN grown on grooved AlN
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) AlN
Keyword(3) Sapphire
Keyword(4) TEM
Keyword(5) Dislocation
Keyword(6) MOVPE
1st Author's Name Toshiaki MORI
1st Author's Affiliation Department of Materials Science and Engineering, Meijo University()
2nd Author's Name Toshiaki ASAI
2nd Author's Affiliation Department of Materials Science and Engineering, Meijo University
3rd Author's Name Kentaro NAGAMATSU
3rd Author's Affiliation Department of Materials Science and Engineering, Meijo University
4th Author's Name Motoaki IWAYA
4th Author's Affiliation Department of Materials Science and Engineering, Meijo University
5th Author's Name Satoshi KAMIYAMA
5th Author's Affiliation Department of Materials Science and Engineering, Meijo University
6th Author's Name Hiroshi AMANO
6th Author's Affiliation Department of Materials Science and Engineering, Meijo University
7th Author's Name Isamu AKASAKI
7th Author's Affiliation Department of Materials Science and Engineering, Meijo University
Date 2008-05-16
Paper # ED2008-12,CPM2008-20,SDM2008-32
Volume (vol) vol.108
Number (no) 36
Page pp.pp.-
#Pages 4
Date of Issue