| Presentation | 2008-05-15 Investigation of deep levels in GaPN by photoconductivity transient measurement Keita IZUMI, Hiroshi OKADA, Yuzo FURUKAWA, Akihiro WAKAHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to realize an optoelectronic integrated circuit (OEIC) united Si integrated circuit and luminescent device, a luminescent device has to be lattice matched to Si because III-V compound semiconductors are use a luminescent device. GaP_<0.98>N_<0.02> is lattice matched to Si. But, some defects in the luminescent materials degrades luminescent property. In this study, we investigated for deep levels by using photoconductivity transient measurement. According to temperature dependence of mobility, phonon scattering is dominant in n-type GaP. But, ionized impurity scattering is dominant in Si doped n-type GaP_<0.991>N_<0.009>. From photoconductivity transient measurement of GaPN with 1 % N content, there are no clear difference in defect formation by changing the dopant of Si and S. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | optoelectronic intergrated circuit / GaPN / photoconductivity transient measurement |
| Paper # | ED2008-7,CPM2008-15,SDM2008-27 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of deep levels in GaPN by photoconductivity transient measurement |
| Sub Title (in English) | |
| Keyword(1) | optoelectronic intergrated circuit |
| Keyword(2) | GaPN |
| Keyword(3) | photoconductivity transient measurement |
| 1st Author's Name | Keita IZUMI |
| 1st Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Hiroshi OKADA |
| 2nd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Yuzo FURUKAWA |
| 3rd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 4th Author's Name | Akihiro WAKAHARA |
| 4th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| Date | 2008-05-15 |
| Paper # | ED2008-7,CPM2008-15,SDM2008-27 |
| Volume (vol) | vol.108 |
| Number (no) | 36 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |