| Presentation | 2008-05-16 Iodine doping of CdTe Layers Grown on Si substrates by MOVPE (II) Hatasu Ichihashi, Wataru Yamada, Yasuhiro Kai, Akinobu Watanabe, Tomoya Nakanishi, Hiroki Oka, Hajime Nakashima, Yasunori Agata, Madan Niraula, Kazuhito Yasuda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Growth characteristics of high resistive CdTe layers by metal-organic vapor phase epitaxy have been studied. Layers were grown using dimethylcadmium (DMCd) and diethyltelluride (DETe) at growth temperature of 510℃ and 610℃, where ethyliodine (EI) was a dopant. At the supply rate ratio of DETe to DMCd (VI/II ratio) of 3.0, the resistivity of layers increased abruptly at the supply rate of EI above 1.0×10^<-6> mol/min. When the VI/II ratio was decreased to 1.0, the increase of the resistivity shifted to occur at lower supply rate of EI. The mechanisms of the high resistivity were also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / high resistive CdTe / Iodine doping / CdTe on Si substrate |
| Paper # | ED2008-18,CPM2008-26,SDM2008-38 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Iodine doping of CdTe Layers Grown on Si substrates by MOVPE (II) |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | high resistive CdTe |
| Keyword(3) | Iodine doping |
| Keyword(4) | CdTe on Si substrate |
| 1st Author's Name | Hatasu Ichihashi |
| 1st Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Wataru Yamada |
| 2nd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | Yasuhiro Kai |
| 3rd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 4th Author's Name | Akinobu Watanabe |
| 4th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 5th Author's Name | Tomoya Nakanishi |
| 5th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 6th Author's Name | Hiroki Oka |
| 6th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 7th Author's Name | Hajime Nakashima |
| 7th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 8th Author's Name | Yasunori Agata |
| 8th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 9th Author's Name | Madan Niraula |
| 9th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 10th Author's Name | Kazuhito Yasuda |
| 10th Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| Date | 2008-05-16 |
| Paper # | ED2008-18,CPM2008-26,SDM2008-38 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |