| Presentation | 2008-05-16 Iodine doping in CdTe layer on Si substrate grown by MOVPE (I) Akinobu Watanabe, Yasuhiro Kai, Wataru Yamada, Hatasu Ichihashi, Tomohiro Yoneyama, Daisuke Katoh, Kazuya Matsumoto, Yasunori Agata, Madan Niraula, Kazuhito Yasuda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Iodine doping of CdTe layers grown on Si substrates by metal-organic vapor phase epitaxy has been studied using ethyliodine (EI) as a dopant. CdTe layers were grown at the growth temperature of 325℃ and the DETe/DMCd supply ratio of 0.25. n-type layers with electron concentrations from 10^<13> to 10^<16> cm^<-3> were obtained by controlling the supply rate of EI. The grown layers were also examined by photoluminescence (PL) at 4.2K. PL spectra of doped layers showed consistent variation with incorporation of iodine. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / n-CdTe / EI doping / CdTe on Si substrate |
| Paper # | ED2008-17,CPM2008-25,SDM2008-37 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Iodine doping in CdTe layer on Si substrate grown by MOVPE (I) |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | n-CdTe |
| Keyword(3) | EI doping |
| Keyword(4) | CdTe on Si substrate |
| 1st Author's Name | Akinobu Watanabe |
| 1st Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Yasuhiro Kai |
| 2nd Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | Wataru Yamada |
| 3rd Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 4th Author's Name | Hatasu Ichihashi |
| 4th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 5th Author's Name | Tomohiro Yoneyama |
| 5th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 6th Author's Name | Daisuke Katoh |
| 6th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 7th Author's Name | Kazuya Matsumoto |
| 7th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 8th Author's Name | Yasunori Agata |
| 8th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 9th Author's Name | Madan Niraula |
| 9th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| 10th Author's Name | Kazuhito Yasuda |
| 10th Author's Affiliation | Graduate school of Engineering, Nagoya Institute of Technology |
| Date | 2008-05-16 |
| Paper # | ED2008-17,CPM2008-25,SDM2008-37 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |