Presentation 2008-05-16
Effect of strain relaxation process on polarization in strained superlattice spin-polarized photocathode
Yuya Maeda, Xiuguang Jin, Masatoshi Tanioku, Shingo Fuchi, Toru Ujihara, Yoshikazu Takeda, Naoto Yamamoto, Atsushi Mano, Yasuhide Nakagawa, Masahiro Yamamoto, Shoji Okumi, Tsutomu Nakanishi, Takashi Saka, Hiromichi Horinaka, Toshihiro Kato, Tsuneo Yasue, Takanori Koshikawa,
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Abstract(in English) We successfully developed a super-high brightness and high-spin-polarization electron source based on GaAs/GaAsP strain superlattice. In the development, we found out that the polarization of superlattice grown on a GaP substrate was lower than that on a GaAs substrate, and inserting a GaAs interlayer on a GaP substrate improved the polarization. From a viewpoint of strain relaxation process in a GaAsP buffer layer, the mechanism of polarization degradation was investigated. The buffer layer with in-plain tensile strain is relaxed by inducing some cracks. On the other hand, the buffer layer with in-plain compressive strain is relaxed by inducing some dislocations. The dislocations disturb a spin of electron in the sample more effectively than the cracks do.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) superlattice / lattice-mismatch / spin-polarization / photocathode
Paper # ED2008-16,CPM2008-24,SDM2008-36
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Committee CPM
Conference Date 2008/5/8(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of strain relaxation process on polarization in strained superlattice spin-polarized photocathode
Sub Title (in English)
Keyword(1) superlattice
Keyword(2) lattice-mismatch
Keyword(3) spin-polarization
Keyword(4) photocathode
1st Author's Name Yuya Maeda
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
2nd Author's Name Xiuguang Jin
2nd Author's Affiliation Graduate School of Engineering, Nagoya University
3rd Author's Name Masatoshi Tanioku
3rd Author's Affiliation Graduate School of Engineering, Nagoya University
4th Author's Name Shingo Fuchi
4th Author's Affiliation Graduate School of Engineering, Nagoya University
5th Author's Name Toru Ujihara
5th Author's Affiliation Graduate School of Engineering, Nagoya University
6th Author's Name Yoshikazu Takeda
6th Author's Affiliation Graduate School of Engineering, Nagoya University
7th Author's Name Naoto Yamamoto
7th Author's Affiliation Graduate School of Science, Nagoya University
8th Author's Name Atsushi Mano
8th Author's Affiliation Graduate School of Science, Nagoya University
9th Author's Name Yasuhide Nakagawa
9th Author's Affiliation Graduate School of Science, Nagoya University
10th Author's Name Masahiro Yamamoto
10th Author's Affiliation Graduate School of Science, Nagoya University
11th Author's Name Shoji Okumi
11th Author's Affiliation Graduate School of Science, Nagoya University
12th Author's Name Tsutomu Nakanishi
12th Author's Affiliation Graduate School of Science, Nagoya University
13th Author's Name Takashi Saka
13th Author's Affiliation School of Engineering, Daido Institute of Technology
14th Author's Name Hiromichi Horinaka
14th Author's Affiliation Graduate School of Engineering, Osaka Prefecture University
15th Author's Name Toshihiro Kato
15th Author's Affiliation Daido Steel Co., Ltd.
16th Author's Name Tsuneo Yasue
16th Author's Affiliation Fundamental Electronics Research Institute, Academic Frontier Promotion Center, Osaka Electro-Communication University
17th Author's Name Takanori Koshikawa
17th Author's Affiliation Fundamental Electronics Research Institute, Academic Frontier Promotion Center, Osaka Electro-Communication University
Date 2008-05-16
Paper # ED2008-16,CPM2008-24,SDM2008-36
Volume (vol) vol.108
Number (no) 35
Page pp.pp.-
#Pages 6
Date of Issue