Presentation 2008-05-16
Lateral growth of GaAs (001) microchannel epitaxy grown by temperature difference method
Yasumasa Tejima, Kenshiro Suzuki, Shigeya Naritsuka, Takahiro Maruyama,
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Abstract(in English) Microchannel epitaxy (MCE) is a suitable technique to reduce dislocations in the heteroepitaxy with a large lattice mismatch. In MCE, for example, the growth of the dislocation-free areas of GaAs on Si substrates is obtainted. However, in an ordinary LPE technique, there is a limit in expanding the dislocation-free areas. Therefore, we used the temperature difference method, by which the continuous growth is possible. To make a temperature difference, H_2 is directly blown from the backside of the substrate. In this study, the growth condition for the lateral growth using temperature difference method in MCE is investigated.
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Keyword(in English) Microchannel epitaxy / GaAs / Dislocation-free / Liquid phase epitaxy / Heteroepitaxy
Paper # ED2008-15,CPM2008-23,SDM2008-35
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Committee CPM
Conference Date 2008/5/8(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Lateral growth of GaAs (001) microchannel epitaxy grown by temperature difference method
Sub Title (in English)
Keyword(1) Microchannel epitaxy
Keyword(2) GaAs
Keyword(3) Dislocation-free
Keyword(4) Liquid phase epitaxy
Keyword(5) Heteroepitaxy
1st Author's Name Yasumasa Tejima
1st Author's Affiliation Science & Engineering, Meijo University()
2nd Author's Name Kenshiro Suzuki
2nd Author's Affiliation Science & Engineering, Meijo University
3rd Author's Name Shigeya Naritsuka
3rd Author's Affiliation Science & Engineering, Meijo University
4th Author's Name Takahiro Maruyama
4th Author's Affiliation Science & Engineering, Meijo University
Date 2008-05-16
Paper # ED2008-15,CPM2008-23,SDM2008-35
Volume (vol) vol.108
Number (no) 35
Page pp.pp.-
#Pages 4
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