| Presentation | 2008-05-16 Characterization of Low-Pressure MOCVD-grown Al_xGa_<1-x>N on Si substrates Kouichi Hiromori, Hiroyasu Ishikawa, Fumiyuki Tokura, Keita Shimanaka, Naoto Mori, Tomohiko Morimoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Al_xGa_<1-x>N films were grown on Si substrates as a function of reactor pressure using a low-pressure MOCVD method. The Al solid composition and thickness decrease with the increase of the reactor pressure due to the parasitic reaction between metalorganics and ammonia in the vapor phase, depending on the TMA vapor composition. While full-width at half-maximum values of X-ray ω-scan don't show significant dependence on the reactor pressure, the carbon (C) concentration in Al_xGa_<1-x>N decreases over the entire range of the solid composition with the increase of the reactor pressure. The C concentration increases exponentially to the Al solid composition at the higher reactor pressure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si substrates / MOCVD / AlGaN / Low-pressure / SIMS |
| Paper # | ED2008-14,CPM2008-22,SDM2008-34 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Low-Pressure MOCVD-grown Al_xGa_<1-x>N on Si substrates |
| Sub Title (in English) | |
| Keyword(1) | Si substrates |
| Keyword(2) | MOCVD |
| Keyword(3) | AlGaN |
| Keyword(4) | Low-pressure |
| Keyword(5) | SIMS |
| 1st Author's Name | Kouichi Hiromori |
| 1st Author's Affiliation | Dept. of Engineering Physics, Electronics & Mechanics, Graduate School of Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu Ishikawa |
| 2nd Author's Affiliation | Dept. of Engineering Physics, Electronics & Mechanics, Graduate School of Engineering, Nagoya Institute of Technology:Dept. of Environmental Technology & Urban Planning, Graduate School of Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | Fumiyuki Tokura |
| 3rd Author's Affiliation | Dept. of Engineering Physics, Electronics & Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 4th Author's Name | Keita Shimanaka |
| 4th Author's Affiliation | Dept. of Environmental Technology & Urban Planning, Graduate School of Engineering, Nagoya Institute of Technology |
| 5th Author's Name | Naoto Mori |
| 5th Author's Affiliation | Dept. of Engineering Physics, Electronics & Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| 6th Author's Name | Tomohiko Morimoto |
| 6th Author's Affiliation | Dept. of Engineering Physics, Electronics & Mechanics, Graduate School of Engineering, Nagoya Institute of Technology |
| Date | 2008-05-16 |
| Paper # | ED2008-14,CPM2008-22,SDM2008-34 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |