| Presentation | 2008-05-16 On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realize application to power switching devices, it is necessary to reduce on-resistance as well as to keep the breakdown voltage high enough. By changing the device parameters such as source-drain distance, gate length, etc., correlation between on-resistance and breakdown voltage was deduced experimentally. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / Junction HFET / p-type GaN gate / normally-off / low on-resistance / Breakdown Voltage |
| Paper # | ED2008-13,CPM2008-21,SDM2008-33 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET using p-GaN Gate Contact |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | Junction HFET |
| Keyword(4) | p-type GaN gate |
| Keyword(5) | normally-off |
| Keyword(6) | low on-resistance |
| Keyword(7) | Breakdown Voltage |
| 1st Author's Name | Ryohei Nega |
| 1st Author's Affiliation | Faculty of Science and Technology, Meijo University() |
| 2nd Author's Name | Katsutoshi Mizuno |
| 2nd Author's Affiliation | Faculty of Science and Technology, Meijo University |
| 3rd Author's Name | Motoaki Iwaya |
| 3rd Author's Affiliation | Faculty of Science and Technology, Meijo University |
| 4th Author's Name | Satoshi Kamiyama |
| 4th Author's Affiliation | Faculty of Science and Technology, Meijo University |
| 5th Author's Name | Hiroshi Amano |
| 5th Author's Affiliation | Faculty of Science and Technology, Meijo University |
| 6th Author's Name | Isamu Akasaki |
| 6th Author's Affiliation | Faculty of Science and Technology, Meijo University |
| Date | 2008-05-16 |
| Paper # | ED2008-13,CPM2008-21,SDM2008-33 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |