| Presentation | 2008-05-16 Al/Ti/Al Ohmic Contact to AlGaN/GaN Heterostructure Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostructures. In this structure, low contact resistivity below 5 x 10^<-6> Ωcm^2 was achieved by in wide range of thermal annealing from 650℃ to 900℃, while such low contact was only obtained in the range from 800℃ to 900℃ in conventional ohmic contact structure of Ti/Al/Ni/Au. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN/GaN heterostructures / ohmic contact |
| Paper # | ED2008-11,CPM2008-19,SDM2008-31 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2008/5/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al/Ti/Al Ohmic Contact to AlGaN/GaN Heterostructure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN/GaN heterostructures |
| Keyword(3) | ohmic contact |
| 1st Author's Name | Masanobu Hiroki |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Kazumi Nishimura |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Noriyuki Watanabe |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation:(Present office)NTT Advanced Technology Corporation |
| 4th Author's Name | Yasuhiro Oda |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 5th Author's Name | Takashi Kobayashi |
| 5th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2008-05-16 |
| Paper # | ED2008-11,CPM2008-19,SDM2008-31 |
| Volume (vol) | vol.108 |
| Number (no) | 35 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |