Presentation 2008-05-15
Preparation of β-Ga_2O_3 films by RF magnetron sputtering method
Takashi HORIUCHI, Masaaki ISAI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Interest for environmental problems has been growing these days. Gallium oxide have been focused as an oxygen (O_2) gas sensor which is used for controlling exhausted gases at high temperature. These films were deposited by a RF magnetron sputtering. The effects of annealing process and O_2 gas flow rate on crystallinity were investigated. As a result, it was found that the crystallinity was improved after annealing process. It was also found that high quality films could be prepared under the Ar:O_2 flow rate of 5:1 at the total gas pressure of 2.4sccm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Gallium oxide / Metal oxides / Magnetron sputtering method / Rapid thermal annealing (RTA) / Oxygen sensor
Paper # ED2008-5,CPM2008-13,SDM2008-25
Date of Issue

Conference Information
Committee CPM
Conference Date 2008/5/8(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of β-Ga_2O_3 films by RF magnetron sputtering method
Sub Title (in English)
Keyword(1) Gallium oxide
Keyword(2) Metal oxides
Keyword(3) Magnetron sputtering method
Keyword(4) Rapid thermal annealing (RTA)
Keyword(5) Oxygen sensor
1st Author's Name Takashi HORIUCHI
1st Author's Affiliation Graduate School of Engineering, Shizuoka University()
2nd Author's Name Masaaki ISAI
2nd Author's Affiliation Graduate School of Engineering, Shizuoka University:Faculty of Engineering, Shizuoka University
Date 2008-05-15
Paper # ED2008-5,CPM2008-13,SDM2008-25
Volume (vol) vol.108
Number (no) 35
Page pp.pp.-
#Pages 4
Date of Issue