| Presentation | 2008-04-12 Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei Chiaki YOSHIMOTO, Hiromasa OHMI, Takayoshi SHIMURA, Hiroaki KAKIUCHI, Heiji WATANABE, Kiyoshi YASUTAKE, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We have proposed a method to form large-grained poly-Si thin films using nanocrystalline Ge nuclei on glass substrates. Ge nuclei are fabricated by a combination of the solid-phase crystallization (SPC) of a-Ge and the oxygen etching for controlling their size and density. Using this method, a remarkable reduction of crystallization time for a-Si films has been achieved. In this study, we have investigated the crystallization process of a-Si films with Ge nuclei using Raman spectroscopy. It was found that the activation energy for crystallization varies depending on the deposition method of a-Si films. Fourier transform infrared spectroscopy (FTIR) and thermal desorption spectroscopy (TDS) measurements revealed that the crystallization is accelerated when a-Si layer contains a large number of Si-H bonds. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | poly-Si / nanocrystalline Ge / solid phase crystallization / large grain |
| Paper # | SDM2008-18,OME2008-18 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2008/4/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei |
| Sub Title (in English) | |
| Keyword(1) | poly-Si |
| Keyword(2) | nanocrystalline Ge |
| Keyword(3) | solid phase crystallization |
| Keyword(4) | large grain |
| 1st Author's Name | Chiaki YOSHIMOTO |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | Hiromasa OHMI |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 3rd Author's Name | Takayoshi SHIMURA |
| 3rd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 4th Author's Name | Hiroaki KAKIUCHI |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 5th Author's Name | Heiji WATANABE |
| 5th Author's Affiliation | Graduate School of Engineering, Osaka University |
| 6th Author's Name | Kiyoshi YASUTAKE |
| 6th Author's Affiliation | Graduate School of Engineering, Osaka University |
| Date | 2008-04-12 |
| Paper # | SDM2008-18,OME2008-18 |
| Volume (vol) | vol.108 |
| Number (no) | 2 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |