Presentation 2008-04-12
Electron Microscopic Study of Low Temperature Crystallization of a-SiGe Thin Film
Masaru ITAKURA, Masanobu MIYAO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Microstructures of Si_<0.6>Ge_<0.4> films were investigated by using a transmission electron microscopy (TEM) in order to clarify the low temperature crystallization mechanism in the Ni-metal induced lateral crystallization (Ni-MILC) process. In the specimen annealed at 450 ℃, narrow needlelike Si_<0.6>Ge_<0.4> crystallites about 30 nm in width are formed and a hemispherical Ni (Si_<1-x>Ge_x) nodule was recognized at each crystallization front. At 550 ℃, on the other hand, dendritic crystals composed of many SiGe grains about 200 nm in diameter was observed in the MILC region. In addition, needlelike crystallites were also found to penetrate the center of the dendritic aggregates. These results suggest that the needlelike SiGe crystallites are formed first in association with the formation and migration of Ni (Si_<1-x>Ge_x) precipitate, and subsequently SiGe grains are crystallized on the needlelike crystallites by the spontaneous nucleation and growth.
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Keyword(in English) MILC process / Si-Ge thin films / Ni-monogermanosilicide / Transmission electron microscopy
Paper # SDM2008-16,OME2008-16
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Committee OME
Conference Date 2008/4/4(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electron Microscopic Study of Low Temperature Crystallization of a-SiGe Thin Film
Sub Title (in English)
Keyword(1) MILC process
Keyword(2) Si-Ge thin films
Keyword(3) Ni-monogermanosilicide
Keyword(4) Transmission electron microscopy
1st Author's Name Masaru ITAKURA
1st Author's Affiliation Faculty of Engineering Sciences, Kyushu University()
2nd Author's Name Masanobu MIYAO
2nd Author's Affiliation Faculty of Information Science and Electrical Engineering, Kyushu University
Date 2008-04-12
Paper # SDM2008-16,OME2008-16
Volume (vol) vol.108
Number (no) 2
Page pp.pp.-
#Pages 6
Date of Issue