Presentation | 2008-04-11 Device Simulation on Organic TFT : Dependence on a Structure Chang-Hoon Shim, Reiji Hattori, Fumito Maruoka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We carried out 2-D device simulation of Organic Thin Film Transistor (OTFT) characteristics and showed the difference between staggered and planar structures when the contacts of source/drain were assumed to be Schottky barrier. The results indicate that the decrease of field-effect-mobility in the staggered structure is smaller than that in the planar structure when Schottky barrier is high. Therefore, the staggered structure is superior in OTFT which has relatively high Schottky barrier height. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | OTFT / Staggered Structure / Planar Structure / Contact Resistance |
Paper # | SDM2008-14,OME2008-14 |
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Committee | OME |
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Conference Date | 2008/4/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Device Simulation on Organic TFT : Dependence on a Structure |
Sub Title (in English) | |
Keyword(1) | OTFT |
Keyword(2) | Staggered Structure |
Keyword(3) | Planar Structure |
Keyword(4) | Contact Resistance |
1st Author's Name | Chang-Hoon Shim |
1st Author's Affiliation | Department of Electronics, Kyushu University() |
2nd Author's Name | Reiji Hattori |
2nd Author's Affiliation | Department of Electronics, Kyushu University |
3rd Author's Name | Fumito Maruoka |
3rd Author's Affiliation | Department of Electronics, Kyushu University |
Date | 2008-04-11 |
Paper # | SDM2008-14,OME2008-14 |
Volume (vol) | vol.108 |
Number (no) | 2 |
Page | pp.pp.- |
#Pages | 5 |
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