Presentation 2008-04-11
Device Simulation on Organic TFT : Dependence on a Structure
Chang-Hoon Shim, Reiji Hattori, Fumito Maruoka,
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Abstract(in English) We carried out 2-D device simulation of Organic Thin Film Transistor (OTFT) characteristics and showed the difference between staggered and planar structures when the contacts of source/drain were assumed to be Schottky barrier. The results indicate that the decrease of field-effect-mobility in the staggered structure is smaller than that in the planar structure when Schottky barrier is high. Therefore, the staggered structure is superior in OTFT which has relatively high Schottky barrier height.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) OTFT / Staggered Structure / Planar Structure / Contact Resistance
Paper # SDM2008-14,OME2008-14
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Committee OME
Conference Date 2008/4/4(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Device Simulation on Organic TFT : Dependence on a Structure
Sub Title (in English)
Keyword(1) OTFT
Keyword(2) Staggered Structure
Keyword(3) Planar Structure
Keyword(4) Contact Resistance
1st Author's Name Chang-Hoon Shim
1st Author's Affiliation Department of Electronics, Kyushu University()
2nd Author's Name Reiji Hattori
2nd Author's Affiliation Department of Electronics, Kyushu University
3rd Author's Name Fumito Maruoka
3rd Author's Affiliation Department of Electronics, Kyushu University
Date 2008-04-11
Paper # SDM2008-14,OME2008-14
Volume (vol) vol.108
Number (no) 2
Page pp.pp.-
#Pages 5
Date of Issue