Presentation 2008-04-11
Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing
Akira HEYA, Masahiko SATO, Hiroshi HASEGAWA, Naoto MATSUO,
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Abstract(in English) We tried to improve electrical properties of organic thin-film transistors (OTFTs) by atomic hydrogen annealing (AHA). In this method, the gate insulator (SiO_2) was exposed to atomic hydrogens generated by cracking of hydrogen molecules on heated tungsten wire. The surface properties of SiO_2 were changed by AHA. For the pentacene OTFT fabricated on SiO_2/Si substrate, the on/off ratio was improved from 10 to 100 and the threshold voltage was decreased from 65 to 16 V by AHA. It is considered that the negative charges at interface of SiO_2 film and Si substrate were removed by atomic hydrogens.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) atomic hydrogen annealing / organic thin film transistor / pentacene / interface property
Paper # SDM2008-13,OME2008-13
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Committee OME
Conference Date 2008/4/4(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of Interface Property in Pentacene TFT by Atomic Hydrogen Annealing
Sub Title (in English)
Keyword(1) atomic hydrogen annealing
Keyword(2) organic thin film transistor
Keyword(3) pentacene
Keyword(4) interface property
1st Author's Name Akira HEYA
1st Author's Affiliation University of Hyogo()
2nd Author's Name Masahiko SATO
2nd Author's Affiliation University of Hyogo
3rd Author's Name Hiroshi HASEGAWA
3rd Author's Affiliation University of Hyogo
4th Author's Name Naoto MATSUO
4th Author's Affiliation University of Hyogo
Date 2008-04-11
Paper # SDM2008-13,OME2008-13
Volume (vol) vol.108
Number (no) 2
Page pp.pp.-
#Pages 6
Date of Issue