| Presentation | 2008-04-11 Oxide-channel thin film transistors with ferroelectric and high-k gate insulators Eisuke Tokumitsu, Hiroshi Shibata, Tomohiro Oiwa, Yohei Kondo, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report electrical properties of thin film transistors (TFTs) using ferroelectric and high-dielectric-constant (high-k) materials as gate insulators. Such gate insulators can induce larger charge density than conventional SiO_2 gate insulator., which results in large on current. In addition, nonvolatile memory device can be realized by the ferroelectric-gate insulator. In this work, indium tin oxide (ITO) was used as a channel material, whose conductivity is controlled by ferroelectric (Bi,La)_4Ti_3O_<12> (BLT) or Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 (BZN). ITO-channel TFTs with BLT and BZN gate insulators fabricated on quartz substrate are transparent, and exhibit good electrical properties with a drain current on/off current ratio of 10^7 are demonstrated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin film transistor / oxide semiconductor / ferroelectric / high-k materials |
| Paper # | SDM2008-11,OME2008-11 |
| Date of Issue |
| Conference Information | |
| Committee | OME |
|---|---|
| Conference Date | 2008/4/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Oxide-channel thin film transistors with ferroelectric and high-k gate insulators |
| Sub Title (in English) | |
| Keyword(1) | thin film transistor |
| Keyword(2) | oxide semiconductor |
| Keyword(3) | ferroelectric |
| Keyword(4) | high-k materials |
| 1st Author's Name | Eisuke Tokumitsu |
| 1st Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory() |
| 2nd Author's Name | Hiroshi Shibata |
| 2nd Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory |
| 3rd Author's Name | Tomohiro Oiwa |
| 3rd Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory |
| 4th Author's Name | Yohei Kondo |
| 4th Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory |
| Date | 2008-04-11 |
| Paper # | SDM2008-11,OME2008-11 |
| Volume (vol) | vol.108 |
| Number (no) | 2 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |