Presentation 2008-04-11
Clarification of ITO/AlNiNd contact formation mechanism
Kazumasa Kawase, Tsukasa Motoya, Junji Tanimura, Naoki Tsumura, Kensuke Nagayama, Nobuaki Ishiga, Kazunori Inoue,
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Abstract(in English) The chemical bonding state, crystallized state and element distribution near ITO/AlNiNd interface are investigated. In the case of without post annealing after AlNiNd sputtering, uniform Al_2O_3 layer is grown during ITO sputtering process and electric contact is not formed. In the case of with post annealing, Al_3Ni crystal grains are formed and those are not oxidized during ITO sputtering process. ITO/AlNiNd direct electric contact is fabricated because electric current flows through the Al_3Ni crystal grains.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TFT / contact / AlNi / AlNd / ITO / XPS / TEM / EDX / XD
Paper # SDM2008-8,OME2008-8
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Committee OME
Conference Date 2008/4/4(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Clarification of ITO/AlNiNd contact formation mechanism
Sub Title (in English)
Keyword(1) TFT
Keyword(2) contact
Keyword(3) AlNi
Keyword(4) AlNd
Keyword(5) ITO
Keyword(6) XPS
Keyword(7) TEM
Keyword(8) EDX
Keyword(9) XD
1st Author's Name Kazumasa Kawase
1st Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation()
2nd Author's Name Tsukasa Motoya
2nd Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation
3rd Author's Name Junji Tanimura
3rd Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation
4th Author's Name Naoki Tsumura
4th Author's Affiliation Melco Display Technology Inc.
5th Author's Name Kensuke Nagayama
5th Author's Affiliation Melco Display Technology Inc.
6th Author's Name Nobuaki Ishiga
6th Author's Affiliation Melco Display Technology Inc.
7th Author's Name Kazunori Inoue
7th Author's Affiliation Advanced Technology R&D Center, Mitsubishi Electric Corporation
Date 2008-04-11
Paper # SDM2008-8,OME2008-8
Volume (vol) vol.108
Number (no) 2
Page pp.pp.-
#Pages 4
Date of Issue