Presentation 2008-04-11
Application of Si Thin-Film to Photo-Sensor Devices
Mitsuharu TAI, Yasutaka KONNO, Mutsuko HATANO, Toshio MIYAZAWA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and its photo-induced current is investigated. While the value of photo-induced current in poly-Si TFT is over 20 times as large as the one in a-Si TFT, S/N ratio of a-Si TFT is higher by 30 times of magnitude than that of poly-Si TFT. The relative sensitivity of a-Si TFT more corresponds to the spectral luminous efficiency than that of poly-Si TFT. Simultaneously, poly-Si TFT with offset structure is evaluated to improve S/N ratio and it is increased by 6 times of magnitude. The performance of offset TFT is almost same as PIN diode with poly-Si.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photo-Sensor / Thin-Film Transistor / OFFSET Structure / Polycrystalline Silicon / Amorphous Silicon
Paper # SDM2008-7,OME2008-7
Date of Issue

Conference Information
Committee OME
Conference Date 2008/4/4(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of Si Thin-Film to Photo-Sensor Devices
Sub Title (in English)
Keyword(1) Photo-Sensor
Keyword(2) Thin-Film Transistor
Keyword(3) OFFSET Structure
Keyword(4) Polycrystalline Silicon
Keyword(5) Amorphous Silicon
1st Author's Name Mitsuharu TAI
1st Author's Affiliation Hitachi, Ltd.()
2nd Author's Name Yasutaka KONNO
2nd Author's Affiliation Hitachi, Ltd.
3rd Author's Name Mutsuko HATANO
3rd Author's Affiliation Hitachi, Ltd.
4th Author's Name Toshio MIYAZAWA
4th Author's Affiliation Hitachi Displays, Ltd.
Date 2008-04-11
Paper # SDM2008-7,OME2008-7
Volume (vol) vol.108
Number (no) 2
Page pp.pp.-
#Pages 4
Date of Issue