| Presentation | 2008-04-11 Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai, Toshiharu Suzuki, Masateru Sato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | After UV pulsed excimer laser annealing for heavily boron-, or phosphorous doped Si film, the relation between the conductivity (related to the sheet resistance) and the crystallinity was studied. As a result, the sheet resistance decreased with improving the crystallinity. By adopting and optimizing the UV pulsed excimer laser annealing, efficient solidified activation after melting occurs, the Si film of 50 nm thickness shows extremely low sheet resistance below 90 ohm/□ for phosphorus dose of 2E15 cm^<-2> and of 50 ohm/□ for boron dose of 5E15 cm^<-2>. The result of effective activation for the doped Si film is comparable to the result for bulk single-crystalline Si under thermal equilibrium condition. ELA activation subsequently after ion implantation is effective and is expected to a formation of source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode for SoP (System on Panel) application. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Si / TFT / sheet resistance / conductivity / activation / ion doping / ELA / TFT / photo-diode sensor |
| Paper # | SDM2008-4,OME2008-4 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2008/4/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical activation of heavily doped Si film by crystallization annealing |
| Sub Title (in English) | |
| Keyword(1) | Poly-Si |
| Keyword(2) | TFT |
| Keyword(3) | sheet resistance |
| Keyword(4) | conductivity |
| Keyword(5) | activation |
| Keyword(6) | ion doping |
| Keyword(7) | ELA |
| Keyword(8) | TFT |
| Keyword(9) | photo-diode sensor |
| 1st Author's Name | Takashi Noguchi |
| 1st Author's Affiliation | Faculty of Engineering, University of the Ryukyus() |
| 2nd Author's Name | Tomoyuki Miyahira |
| 2nd Author's Affiliation | Faculty of Engineering, University of the Ryukyus |
| 3rd Author's Name | Kenji Kawai |
| 3rd Author's Affiliation | Faculty of Engineering, University of the Ryukyus |
| 4th Author's Name | Toshiharu Suzuki |
| 4th Author's Affiliation | SEN (an SHI and Axcelis Company) |
| 5th Author's Name | Masateru Sato |
| 5th Author's Affiliation | SEN (an SHI and Axcelis Company) |
| Date | 2008-04-11 |
| Paper # | SDM2008-4,OME2008-4 |
| Volume (vol) | vol.108 |
| Number (no) | 2 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |