Presentation 2008-04-22
X-Band 14W High Efficiency Intenally-Matched HFET
Kazutomi MORI, Jun NISHIHARA, Hiromitsu UTSUMI, Akira INOUE, Moriyasu MIYAZAKI,
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Abstract(in English) An X-Band 14W high efficiency internally-matched HFET has been developed. In order to achieve high efficiency, not only equal combining characteristics but also equal load impedance for each unit FET cell are designed in the input and output matching circuits using EM simulator. In addition to the power splitting and combining characteristics, the large signal load impedance of each FET cell is discussed. The degradation of the efficiency by unequal operation of each FET cell and by mismatch to the optimum load impedance are suppressed within 1% and 2% respectively in the design. The developed HFET has achieved a power-added efficiency (PAE) of 49.8% and an output power of 41.6dBm(14.5W) in X-band..
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Keyword(in English) Microwave / Amplifier / FET / Efficiency / Output Power
Paper # SCE2008-11,MW2008-11
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Committee MW
Conference Date 2008/4/15(1days)
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Paper Information
Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) X-Band 14W High Efficiency Intenally-Matched HFET
Sub Title (in English)
Keyword(1) Microwave
Keyword(2) Amplifier
Keyword(3) FET
Keyword(4) Efficiency
Keyword(5) Output Power
1st Author's Name Kazutomi MORI
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Jun NISHIHARA
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Hiromitsu UTSUMI
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Akira INOUE
4th Author's Affiliation Mitsubishi Electric Corporation
5th Author's Name Moriyasu MIYAZAKI
5th Author's Affiliation Mitsubishi Electric Corporation
Date 2008-04-22
Paper # SCE2008-11,MW2008-11
Volume (vol) vol.108
Number (no) 13
Page pp.pp.-
#Pages 4
Date of Issue