Presentation 2008-01-29
Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy
Yusuke Kinoshita, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto,
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Abstract(in English) GaAs_<1-x>Bi_x/GaAs multi-quantum well (MQW) structures were grown on GaAs substrate by molecular beam epitaxy (MBE) towards a new semiconductor laser diode with a temperature-insensitive wavelength. Satellite peaks ascribed to the MQW structure were observed in the X-ray diffraction (XRD) measurement. With decreasing the well width of MQW, the photoluminescence (PL) peak energy increased, indicating the quantum size effect. Both intensities and position of the satellite peaks of MQW in XRD did not change, and the PL peak energy was kept constant, after annealing at temperatures less than 700℃. This confirms the thermal stability of the GaAs_<1-x>Bi_x/GaAs MQW structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs / GaAs_<1-x>Bi_x / semimetal / multi-quantum wells / molecular beam epitaxy
Paper # PN2007-56,OPE2007-164,LQE2007-142
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Committee LQE
Conference Date 2008/1/21(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy
Sub Title (in English)
Keyword(1) GaAs
Keyword(2) GaAs_<1-x>Bi_x
Keyword(3) semimetal
Keyword(4) multi-quantum wells
Keyword(5) molecular beam epitaxy
1st Author's Name Yusuke Kinoshita
1st Author's Affiliation Department of Electronics, Kyoto Institute of Technology()
2nd Author's Name Yoriko Tominaga
2nd Author's Affiliation Department of Electronics, Kyoto Institute of Technology
3rd Author's Name Kunishige Oe
3rd Author's Affiliation Department of Electronics, Kyoto Institute of Technology
4th Author's Name Masahiro Yoshimoto
4th Author's Affiliation Department of Electronics, Kyoto Institute of Technology
Date 2008-01-29
Paper # PN2007-56,OPE2007-164,LQE2007-142
Volume (vol) vol.107
Number (no) 466
Page pp.pp.-
#Pages 4
Date of Issue