Presentation | 2008-01-29 Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy Yusuke Kinoshita, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaAs_<1-x>Bi_x/GaAs multi-quantum well (MQW) structures were grown on GaAs substrate by molecular beam epitaxy (MBE) towards a new semiconductor laser diode with a temperature-insensitive wavelength. Satellite peaks ascribed to the MQW structure were observed in the X-ray diffraction (XRD) measurement. With decreasing the well width of MQW, the photoluminescence (PL) peak energy increased, indicating the quantum size effect. Both intensities and position of the satellite peaks of MQW in XRD did not change, and the PL peak energy was kept constant, after annealing at temperatures less than 700℃. This confirms the thermal stability of the GaAs_<1-x>Bi_x/GaAs MQW structure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs / GaAs_<1-x>Bi_x / semimetal / multi-quantum wells / molecular beam epitaxy |
Paper # | PN2007-56,OPE2007-164,LQE2007-142 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2008/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of GaAs_<1-x>Bi_x/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy |
Sub Title (in English) | |
Keyword(1) | GaAs |
Keyword(2) | GaAs_<1-x>Bi_x |
Keyword(3) | semimetal |
Keyword(4) | multi-quantum wells |
Keyword(5) | molecular beam epitaxy |
1st Author's Name | Yusuke Kinoshita |
1st Author's Affiliation | Department of Electronics, Kyoto Institute of Technology() |
2nd Author's Name | Yoriko Tominaga |
2nd Author's Affiliation | Department of Electronics, Kyoto Institute of Technology |
3rd Author's Name | Kunishige Oe |
3rd Author's Affiliation | Department of Electronics, Kyoto Institute of Technology |
4th Author's Name | Masahiro Yoshimoto |
4th Author's Affiliation | Department of Electronics, Kyoto Institute of Technology |
Date | 2008-01-29 |
Paper # | PN2007-56,OPE2007-164,LQE2007-142 |
Volume (vol) | vol.107 |
Number (no) | 466 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |