Presentation	2008-01-11 1MHz Operation of Grounded-gate Organic Field-effect Transistors Yusaku KATO, Tsuyoshi SEKITANI, Takao SOMEYA,
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Abstract(in English)	We have successfully demonstrated large on/off ratio of 10^3 for gate-grounded organic field-effect transistors (FETs) at the frequency of 1 MHz. Such a large on/off ratio is achieved by the significant reduction in capacitance between gate and source/drain electrodes by using the state-of-the-art shadow mask technique.
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Keyword(in English)	Organic Field-Effect Transistors / AC characteristics / Grounded-gate
Paper #	OME2007-69
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Conference Information
Committee	OME
Conference Date	2008/1/4(1days)
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Paper Information
Registration To	Organic Material Electronics (OME)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	1MHz Operation of Grounded-gate Organic Field-effect Transistors
Sub Title (in English)
Keyword(1)	Organic Field-Effect Transistors
Keyword(2)	AC characteristics
Keyword(3)	Grounded-gate
1st Author's Name	Yusaku KATO
1st Author's Affiliation	Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo()
2nd Author's Name	Tsuyoshi SEKITANI
2nd Author's Affiliation	Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo
3rd Author's Name	Takao SOMEYA
3rd Author's Affiliation	Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo
Date	2008-01-11
Paper #	OME2007-69
Volume (vol)	vol.107
Number (no)	412
Page	pp.pp.-
#Pages	6
Date of Issue