| Presentation | 2008-01-11 Nonvolatile ferroelectric memories using organic transistor structures Koichiro ZAITSU, Tsuyoshi SEKITANI, Kiyoshiro ISHIBE, Takao SOMEYA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have successfully fabricated air-stable organic nonvolatile memories comprising ferroelectric field-effect transistors on plastic substrates. Using a ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer as a gate insulator, we have obtained large hysteresis in transistor switching and realized bistable states in channel conductivity with high "1" and low "0". Organic memories have thus far had the problem of degradation in ambient air. In this study, the passivation method using parylene and metal multiple layers has successfully improved memory data retention in air. The "1"/"0" current ratio in memory transistors exceeds 1000 in air. High ratio above 100 is obtained when they are stored for 25 days in N2 atmosphere although voltages are not applied. Furthermore, in air our memory devices show high "1"/"0" ratio above 500 after 15 days, and the variation is suppressed within 7% compared to N2 atmosphere. This result clearly demonstrates that our organic devices are excellent nonvolatile memories with high air-stability. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Organic transistor / Nonvolatile memory / FeRAM / P(VDF-TrFE) |
| Paper # | OME2007-68 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2008/1/4(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nonvolatile ferroelectric memories using organic transistor structures |
| Sub Title (in English) | |
| Keyword(1) | Organic transistor |
| Keyword(2) | Nonvolatile memory |
| Keyword(3) | FeRAM |
| Keyword(4) | P(VDF-TrFE) |
| 1st Author's Name | Koichiro ZAITSU |
| 1st Author's Affiliation | Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo() |
| 2nd Author's Name | Tsuyoshi SEKITANI |
| 2nd Author's Affiliation | Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo |
| 3rd Author's Name | Kiyoshiro ISHIBE |
| 3rd Author's Affiliation | Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo |
| 4th Author's Name | Takao SOMEYA |
| 4th Author's Affiliation | Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo |
| Date | 2008-01-11 |
| Paper # | OME2007-68 |
| Volume (vol) | vol.107 |
| Number (no) | 412 |
| Page | pp.pp.- |
| #Pages | 6 |
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