Presentation 2008-01-18
A multi-layer wafer-level 5-μm-thick Cu wiring technology with photosensitive resin
Katsumi KIKUCHI, Kouji SOEJIMA, Yasuhiro ISHII, Masaya KAWANO, Masayuki MIZUNO, Shintaro YAMAMICHI,
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Abstract(in English) We have successfully developed a multi-layer wafer-level 5-um-thick Cu wiring technology and an embedded on-chip capacitor technology with anodized Al_2O_3. We observed that our wafer-level Cu wiring technology improved IR-drop five times as small as conventional LSI, and our anodized Al_2O_3 capacitor technology obtained noise reduction of 20 dBμA over 200 MHz. These technologies are believed to provide not only advanced LSIs with stable power supply wirings and higher speed operation, but also connectivity between LSIs and packaging substrates.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photosensitive resin / Cu electroplate / Anodization / Alumina
Paper # CPM2007-146,ICD2007-157
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Conference Date 2008/1/10(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A multi-layer wafer-level 5-μm-thick Cu wiring technology with photosensitive resin
Sub Title (in English)
Keyword(1) Photosensitive resin
Keyword(2) Cu electroplate
Keyword(3) Anodization
Keyword(4) Alumina
1st Author's Name Katsumi KIKUCHI
1st Author's Affiliation NEC Corporation()
2nd Author's Name Kouji SOEJIMA
2nd Author's Affiliation NEC Electronics Corporation
3rd Author's Name Yasuhiro ISHII
3rd Author's Affiliation NEC Corporation
4th Author's Name Masaya KAWANO
4th Author's Affiliation NEC Electronics Corporation
5th Author's Name Masayuki MIZUNO
5th Author's Affiliation NEC Corporation
6th Author's Name Shintaro YAMAMICHI
6th Author's Affiliation NEC Corporation
Date 2008-01-18
Paper # CPM2007-146,ICD2007-157
Volume (vol) vol.107
Number (no) 426
Page pp.pp.-
#Pages 6
Date of Issue