Presentation 2008-01-31
Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons
Katsuhiko NISHIGUCHI, Akira FUJIWARA,
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Abstract(in English) A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator MOSFET are monitored by an electrometer in real time. Such a random behavior of single electrons is used for random-number generation suitable for a data processing which stochastically extracts the optimum solution among various ones. The use of electron transport in MOSFETs provides high controllability of the randomness, which prevents extracted solutions from staying at undesirable local minimum, as well as fast generation of random numbers. The present result promises new single-electron applications using nanoscale MOSFETs.
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Keyword(in English) Single electron / Si MOSFET / Stochastic data processing
Paper # ED2007-251,SDM2007-262
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Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons
Sub Title (in English)
Keyword(1) Single electron
Keyword(2) Si MOSFET
Keyword(3) Stochastic data processing
1st Author's Name Katsuhiko NISHIGUCHI
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name Akira FUJIWARA
2nd Author's Affiliation NTT Basic Research Laboratories
Date 2008-01-31
Paper # ED2007-251,SDM2007-262
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 5
Date of Issue