Presentation | 2008-01-31 Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons Katsuhiko NISHIGUCHI, Akira FUJIWARA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator MOSFET are monitored by an electrometer in real time. Such a random behavior of single electrons is used for random-number generation suitable for a data processing which stochastically extracts the optimum solution among various ones. The use of electron transport in MOSFETs provides high controllability of the randomness, which prevents extracted solutions from staying at undesirable local minimum, as well as fast generation of random numbers. The present result promises new single-electron applications using nanoscale MOSFETs. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single electron / Si MOSFET / Stochastic data processing |
Paper # | ED2007-251,SDM2007-262 |
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Committee | SDM |
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Conference Date | 2008/1/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Stochastic data processing based on single electrons using nano-MOSFETs : Detection and control of stochastic behavior of single electrons |
Sub Title (in English) | |
Keyword(1) | Single electron |
Keyword(2) | Si MOSFET |
Keyword(3) | Stochastic data processing |
1st Author's Name | Katsuhiko NISHIGUCHI |
1st Author's Affiliation | NTT Basic Research Laboratories() |
2nd Author's Name | Akira FUJIWARA |
2nd Author's Affiliation | NTT Basic Research Laboratories |
Date | 2008-01-31 |
Paper # | ED2007-251,SDM2007-262 |
Volume (vol) | vol.107 |
Number (no) | 474 |
Page | pp.pp.- |
#Pages | 5 |
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