Presentation 2008-01-31
Implementation of Active and Sequential Circuits on GaAs-based Nanowire Network Structures Controlled by Schottky Wrap Gates
Seiya KASAI, Hong-Quan ZHAO, Tamotsu HASHIZUME,
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Abstract(in English) Implementation of active and sequential circuits on semiconductor-based nanowire networks with a specific topology and periodicity is investigated. Concept of the circuits and design scheme are explained. Then fabrication on AlGaAs/GaAs-based etched nanowire network and their characterization are described. Issues and prospects of this circuit implementation technique are also discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nanowire Network / Wrap Gate (WPG) / Flip Flop / Ring Oscillator / GaAs / Topology
Paper # ED2007-249,SDM2007-260
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Conference Information
Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Implementation of Active and Sequential Circuits on GaAs-based Nanowire Network Structures Controlled by Schottky Wrap Gates
Sub Title (in English)
Keyword(1) Nanowire Network
Keyword(2) Wrap Gate (WPG)
Keyword(3) Flip Flop
Keyword(4) Ring Oscillator
Keyword(5) GaAs
Keyword(6) Topology
1st Author's Name Seiya KASAI
1st Author's Affiliation Graduate School of Information Science & Technology and Research Center for Integrated Quantum Electronics, Hokkaido University:PREST, JST()
2nd Author's Name Hong-Quan ZHAO
2nd Author's Affiliation Graduate School of Information Science & Technology and Research Center for Integrated Quantum Electronics
3rd Author's Name Tamotsu HASHIZUME
3rd Author's Affiliation Graduate School of Information Science & Technology and Research Center for Integrated Quantum Electronics
Date 2008-01-31
Paper # ED2007-249,SDM2007-260
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 6
Date of Issue