Presentation 2008-01-31
Approaches to the high temperature operation of the carbon nanotube single electron transistor
Takahiro MORI, Sunsuke SATO, Kazuo OMURA, Katsumi UCHIDA, Hirofumi YAJIMA, Koji ISHIBASHI,
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Abstract(in English) Single-walled carbon nanotubes (SWNTs) are promising candidates for the building block of the single electron transistor (SET). To achieve the room-temperature operation, we tried to improve the temperature characteristics of the SWNT-SETs. The barriers, which confine electrons in the Coulomb island, dominate the temperature characteristics of the SWNT-SETs mainly. We report our approaches to form the "good" barriers. Two approaches are under way, one is the method for the barrier characteristics improvement with an organic material, and the other is the barrier formation with the defects induced by ion beam. We achieved the operation temperature of 80K and 120K, by the respective methods.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) carbon nanotube / single electron transistor
Paper # ED2007-245,SDM2007-256
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Conference Information
Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Approaches to the high temperature operation of the carbon nanotube single electron transistor
Sub Title (in English)
Keyword(1) carbon nanotube
Keyword(2) single electron transistor
1st Author's Name Takahiro MORI
1st Author's Affiliation RIKEN()
2nd Author's Name Sunsuke SATO
2nd Author's Affiliation RIKEN:Faculty of Science, Tokyo University of Science
3rd Author's Name Kazuo OMURA
3rd Author's Affiliation RIKEN:Faculty of Science, Tokyo University of Science
4th Author's Name Katsumi UCHIDA
4th Author's Affiliation Faculty of Science, Tokyo University of Science
5th Author's Name Hirofumi YAJIMA
5th Author's Affiliation Faculty of Science, Tokyo University of Science
6th Author's Name Koji ISHIBASHI
6th Author's Affiliation RIKEN:CREST, JST
Date 2008-01-31
Paper # ED2007-245,SDM2007-256
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 4
Date of Issue