Presentation 2008-01-31
Thermoelectric characteristics in Si nanostructures
Hiroya IKEDA, Naomi YAMASHITA,
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Abstract(in English) In order to obtain the thermoelectric characteristics enough for practical use, we make use of nanostructures in the thermoelectric devices. In this study, we measure the Seebeck coefficient and electrical conductivity of 2-dimensional (2D) Si slab structures fabricated on SOI (silicon on insulator) wafers, and we discuss the effect of the electron confinement on the thermoelectric characteristics. It is found that a 3-nm-thick SOI sample has a higher Seebeck coefficient comparing to other samples with SOI thickness above 6nm. This result suggests that the Seebeck coefficient can be enhanced due to the electron confinement in a 2D quantum well for the SOI samples as thin as 3nm.
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Keyword(in English) thermoelectric device / nanostructure / Seebeck coefficient / silicon on insulator / electron confinement
Paper # ED2007-244,SDM2007-255
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Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermoelectric characteristics in Si nanostructures
Sub Title (in English)
Keyword(1) thermoelectric device
Keyword(2) nanostructure
Keyword(3) Seebeck coefficient
Keyword(4) silicon on insulator
Keyword(5) electron confinement
1st Author's Name Hiroya IKEDA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Naomi YAMASHITA
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2008-01-31
Paper # ED2007-244,SDM2007-255
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 4
Date of Issue