Presentation | 2008-01-31 Thermoelectric characteristics in Si nanostructures Hiroya IKEDA, Naomi YAMASHITA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to obtain the thermoelectric characteristics enough for practical use, we make use of nanostructures in the thermoelectric devices. In this study, we measure the Seebeck coefficient and electrical conductivity of 2-dimensional (2D) Si slab structures fabricated on SOI (silicon on insulator) wafers, and we discuss the effect of the electron confinement on the thermoelectric characteristics. It is found that a 3-nm-thick SOI sample has a higher Seebeck coefficient comparing to other samples with SOI thickness above 6nm. This result suggests that the Seebeck coefficient can be enhanced due to the electron confinement in a 2D quantum well for the SOI samples as thin as 3nm. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | thermoelectric device / nanostructure / Seebeck coefficient / silicon on insulator / electron confinement |
Paper # | ED2007-244,SDM2007-255 |
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Committee | SDM |
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Conference Date | 2008/1/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Thermoelectric characteristics in Si nanostructures |
Sub Title (in English) | |
Keyword(1) | thermoelectric device |
Keyword(2) | nanostructure |
Keyword(3) | Seebeck coefficient |
Keyword(4) | silicon on insulator |
Keyword(5) | electron confinement |
1st Author's Name | Hiroya IKEDA |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Naomi YAMASHITA |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 2008-01-31 |
Paper # | ED2007-244,SDM2007-255 |
Volume (vol) | vol.107 |
Number (no) | 474 |
Page | pp.pp.- |
#Pages | 4 |
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