Presentation 2008-01-30
Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and Its Application to Logic Gates
RAHMAN Shaharin Fadzli Abd, Yuta SHIRATORI, Seiya KASAI,
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Abstract(in English) Three-terminal nanowire junctions show nonlinear electrical characteristics even at room temperature and they are expected to be useful building blocks for state-of-the-art nanowire-based logic circuits. In this study, GaAs-based three-terminal nanowire junction devices are fabricated and characterized, and the mechanism of the nonlinear characteristics is discussed. In order to control the electrical property, Schottky-wrap-gate (WPG)-control of nanowires in the junction is investigated. A NAND circuit integrating three-terminal junctions is also demonstrated for their application to logic circuits.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Three-terminal Nanowire Junction / Nonlinear Property / Logic Circuit / GaAs / Wrap Gate (WPG)
Paper # ED2007-243,SDM2007-254
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Committee SDM
Conference Date 2008/1/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and Its Application to Logic Gates
Sub Title (in English)
Keyword(1) Three-terminal Nanowire Junction
Keyword(2) Nonlinear Property
Keyword(3) Logic Circuit
Keyword(4) GaAs
Keyword(5) Wrap Gate (WPG)
1st Author's Name RAHMAN Shaharin Fadzli Abd
1st Author's Affiliation Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science & Technology, Hokkaido University()
2nd Author's Name Yuta SHIRATORI
2nd Author's Affiliation Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science & Technology, Hokkaido University
3rd Author's Name Seiya KASAI
3rd Author's Affiliation Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science & Technology, Hokkaido University:PREST, JST
Date 2008-01-30
Paper # ED2007-243,SDM2007-254
Volume (vol) vol.107
Number (no) 474
Page pp.pp.-
#Pages 6
Date of Issue