| Presentation | 2008-01-30 Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi KOYAMA, Tatsuya INOUE, Naoki AMANO, Kenji FUJIWARA, Toshihiko MAEMOTO, Shigehiko SASA, Masataka INOUE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We fabricated InAs/AlGaSb three-terminal ballistic junction devices composed of three quantum wires, and characterised electron transport properties with scanning the voltage on the left branch while keeping the voltage on the right constant at 77K and 300K. In these structures, we observed clear nonlinearity in the output voltage measured at the central branch. The nonlinear characteristics agreed well with a theoretical prediction. When the left branch is biased to a finite voltage V and the right to a voltage of-V (push-pull fashion), negative voltages appeared at the central branch regardless of the polarity of V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs/AlGaSb heterostructures / Ballistic electron transport / Nonlinear electron transport / Quantum wire |
| Paper # | ED2007-242,SDM2007-253 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/1/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions |
| Sub Title (in English) | |
| Keyword(1) | InAs/AlGaSb heterostructures |
| Keyword(2) | Ballistic electron transport |
| Keyword(3) | Nonlinear electron transport |
| Keyword(4) | Quantum wire |
| 1st Author's Name | Masatoshi KOYAMA |
| 1st Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology() |
| 2nd Author's Name | Tatsuya INOUE |
| 2nd Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| 3rd Author's Name | Naoki AMANO |
| 3rd Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| 4th Author's Name | Kenji FUJIWARA |
| 4th Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| 5th Author's Name | Toshihiko MAEMOTO |
| 5th Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| 6th Author's Name | Shigehiko SASA |
| 6th Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| 7th Author's Name | Masataka INOUE |
| 7th Author's Affiliation | Nanomaterials Microdevices Research Center, Osaka Institute of Technology |
| Date | 2008-01-30 |
| Paper # | ED2007-242,SDM2007-253 |
| Volume (vol) | vol.107 |
| Number (no) | 474 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |